SS23-L Datasheet | Specifications & PDF Download

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20 --- 100 V 2.0A SS22F thru SS220F Surface Mount Schottky Barrier Rectifiers Reverse Voltage 20 to 100 V Forward Current 2.0 A Features ·。High Cu

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SS22 THRU SS210 2.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES * Ideal for surface mount applications * Easy pick and place * Built-in s

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SS22 - S210 — Schottky Rectifier SS22 - S210 Schottky Rectifier Features • Glass-Passivated Junctions • High-Current Capability, Low VF Applications

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BL FEATURES GALAXY ELECTRICAL SS22A---SS210A REVERSE VOLTAGE: 20 - 100 V FORWARD CURRENT: 2.0 A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS (DO-214A

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SSS2321 P-Channel Enhancement Mode MOSFET SOT-23 D Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 60 @VGS = -4.5V G 21 23 YW -20V -3.4A 80 @VGS

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SS22A THRU SS210A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 V Forward Current - 2 A Features • Metal silicon junction, majo

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GSDSS22W Series Surface Mount Schottky Rectifiers Product Description Reverse Voltage 20V to 100V Forward Current 2.0A Packages Features „ Ideally s

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FSS230D, FSS230R June 1998 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Inte

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Production specification SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS SS22FA--SS210FA FEATURES z Schottky barrier rectifier z Guarding protection Pb

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Suntan® Su® SS22 THRU SS210 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 100 Volts CURRENT 2.0 Ampere FEATU RE S ◆Low profile surfac

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2.0A Surface Mount Schottky Rectifier SS22 – SS210 2.0A Surface Mount Schottky Rectifier Features • For surface mount applications • Metal-Semicond

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Schottky Barrier Rectifiers Production specification SS22F--SS245F Features  Metal silicon junction, majority carrier conduction  High surge capab

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Schottky Barrier Rectifiers Production specification SS22--SS24 Features  Metal silicon junction, majority carrier conduction  High surge capabili

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SSS2308 N-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (m ) Max D SOT-23 80 @VGS = 4.5V 20V 2.3A 110 @VGS = 2.5V G S D F

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SSS2323 P-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) 35 @VGS = -4.5V -20V -4A 55 @VGS = -2.5V 100 @VGS = -1.8V G S D SOT-

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SS22 – SS215 Taiwan Semiconductor 2A, 20V - 150V Schottky Barrier Surface Mount Rectifier FEATURES ● Low power loss, high efficiency ● Ideal for aut

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® WON-TOP ELECTRONICS SS22 – SS210 2.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Construction with Oxide

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FSS234D, FSS234R June 1998 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features • 6A, 250V, rDS(ON) = 0.600Ω • Total Dos

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