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P-Channel 20 V (D-S) MOSFET
SiSS23DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
0.0045 at VGS = - 4.5 V
- 20 0.0063 at VGS = - 2.5 V
0.0115 at VGS = - 1.8 V
ID (A) - 50e - 50e - 50e
PowerPAK 1212-8S
Qg (Typ.) 93 nC
3.3 mm
3.3 mm
S
S
1
2
S
3
G 4
0.75 mm
D
8
D
7
D
6
D 5
Bottom View
Ordering Information: SiSS23DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES • TrenchFET® Power MOSFET • Low Thermal Resistance PowerPAK®
Package with Small Size and Low 0.75 mm Profile
• 100 % Rg and UIS Tested • Material categorization: For definitions of compliance
please see www.vishay.