SiSS22LDN - N-Channel 60V MOSFET

Vishay

Key Features

TrenchFET® Gen IV power MOSFET.
Very low RDS - Qg figure-of-merit (FOM).
Tuned for the lowest RDS - Qoss FOM.
100 % Rg and UIS tested.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

SiSS22LDN n-channel 60v mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	SiSS22LDN
Manufacturer	Vishay
File Size	192.20 KB
Description	N-Channel 60V MOSFET
Datasheet	SiSS22LDN Datasheet

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Full PDF Text Transcription (Reference)

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www.vishay.com SiSS22LDN Vishay Siliconix N-Channel 60 V (D-S) MOSFET PowerPAK® 1212-8S D D D 6 D 7 8 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View 60 0.00365 0.00510 17.4 92.5 Single FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS - Qg figure-of-merit (FOM) • Tuned for the lowest RDS - Qoss FOM • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.