SiSS22DN Description
() at VGS = 10 V RDS(on) max. () at VGS = 7.5 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View 60 0.004 0.005 22.5 90.6 Single.
SiSS22DN Key Features
- TrenchFET® Gen IV power MOSFET
- Very low RDS
- Qg figure-of-merit (FOM)
- Tuned for the lowest RDS
- Qoss FOM
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance