Siemens Semiconductor Group BA Datasheet | Specifications & PDF Download

BAT 62-03W Silicon Schottky Diode • Low Barrier diode for detectors up to GHz frequencies ESD: ElectroStatic Discharge sensitive device, observe hand

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Silicon RF Switching Diode q BA 582 For low-loss VHF band switching in TV/VTR tuners Type BA 582 Marking blue S Ordering Code Pin Configuration Q

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3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 168 pin unbuffered DIMM Modules HYS64/72V2200GU-8/-10 HYS64/72V4220GU

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BAT 64 Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated

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3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 168 pin unbuffered DIMM Modules HYS64/72V2200GU-8/-10 HYS64/72V4220GU

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Silicon Schottky Diode q q q q q q BAT 32 RF detector Low-power mixer Zero bias Very low capacitance For frequencies up to 18 GHz HiRel/Mil-tested d

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3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 168 pin unbuffered DIMM Modules HYS64/72V2200GU-8/-10 HYS64/72V4220GU

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3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 168 pin unbuffered DIMM Modules HYS64/72V2200GU-8/-10 HYS64/72V4220GU

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BAR 63 Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up

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Silicon Dual Schottky Diode BAT 114-099 Features • High barrier diode for balanced mixers, phase detectors and modulators ESD: ElectroStatic Discha

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BAS 125W Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrate

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Silicon Schottky Diodes q q q q BAT 15- … D Beam lead technology Low dimension High performance Low barrier ESD: Electrostatic discharge sensitive

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BA 585 Silicon PIN Diode q q BA 585 Current-controlled RF resistor for switching and attenuating applications. Frequency range 1 MHz … 2 GHz Type

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Silicon PIN Diodes BAR 14-1 … BAR 16-1 q q q q RF switch RF attenuator for frequencies above 10 MHz Low distortion factor Long-term stability of el

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BAS 170W Silicon Schottky Diode l General-purpose diodes for high-speed switching l Circuit protection l Voltage clamping l High-level detecting and

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HiRel Silicon Schottky Diode Features ¥ HiRel Discrete and Microwave Semiconductor ¥ Medium barrier diodes for detector and mixer applications ¥ Herme

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BAT 62-07W Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive d

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