Siemens Semiconductor Group IL Datasheet | Specifications & PDF Download

Silicon Spreading Resistance Temperature Sensor in Leaded Plastic Package Features • Temperature dependent Resistor with Positive Temperature Coeffici

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Silicon Schottky Diodes q q q q BAT 15- … 4 Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40

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Silicon Spreading Resistance Temperature Sensor in Surface Mount Technology Features • Temperature dependent Resistor with Positive Temperature Coeffi

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HiRel Silicon Schottky Diode Features ¥ HiRel Discrete and Microwave Semiconductor ¥ Medium barrier diodes for detector and mixer applications ¥ Herme

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ILD205/206/207/211/213/217 FEATURES • Two Channel Coupler • Industry Standard SOIC-8 Surface Mountable Package • Standard Lead Spacing of .05 • Avail

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Silicon Spreading Resistance Temperature Sensor in Miniature Leaded Plastic Package Features KT 110, KT 210, KTY 11, KTY 21 • Temperature dependent

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Silicon Spreading Resistance Temperature Sensor in Robust Threaded Metal Housing Features • Temperature dependent Resistor with Positive Temperature C

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Silicon Dual Schottky Diode BAT 114-099 Features • High barrier diode for balanced mixers, phase detectors and modulators ESD: ElectroStatic Discha

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Silicon RF Switching Diode q BA 582 For low-loss VHF band switching in TV/VTR tuners Type BA 582 Marking blue S Ordering Code Pin Configuration Q

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Silicon Spreading Resistance Temperature Sensor in Miniature Leaded Plastic Package Features KT 110, KT 210, KTY 11, KTY 21 • Temperature dependent

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NPN Silicon AF Transistor BC 846 W BC 850 W Features q q q q q For AF input stages and driver applications High current gain Low collector-emit

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BAS 16S Silicon Switching Diode Array • For high-speed switching applications • Internal (galvanic) isolated Diodes in one package Tape loading orient

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SINGLE CHANNEL DUAL CHANNEL IL250/251/252 ILD250/251/252 BIDIRECTIONAL INPUT OPTOCOUPLER FEATURES • Selected Current Transfer Ratios 20%, 50%, 100%

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BCR 198 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=47kΩ, R2=47kΩ) T

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BC 817-16W NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation vol

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BA 886 Silicon PIN Diode Preliminary Data q q q BA 886 Current-controlled RF resistor for switching and attenuating applications Frequency range ab

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Silicon PIN Diodes BAR 14-1 … BAR 16-1 q q q q RF switch RF attenuator for frequencies above 10 MHz Low distortion factor Long-term stability of el

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Silicon Schottky Diodes q q q BAT 14- … 4 Medium barrier diodes for detector and mixer applications Hermetical ceramic package For frequencies up to

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BAT1414-… S BAT S Silicon Schottky Diodes q q q q BAT 14- … S Beam lead technology Low dimension High performance Medium barrier ESD: Electrost

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