.
Siemens Semiconductor Group
63
BF599 - NPN Silicon RF Transistor
NPN Silicon RF Transistor q q BF 599 Common emitter IF/RF amplifier Low feedback capacitance due to shield diffusion Type BF 599 Marking NB Order.
Siemens Semiconductor Group
23
BCV62 - PNP Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching)
PNP Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emit.
Siemens Semiconductor Group
23
IL485 - OPTICALLY COUPLED HIGH SPEED MOSFET DRIVERS OPTOCOUPLER
IL485 OPTICALLY COUPLED HIGH SPEED MOSFET DRIVERS OPTOCOUPLER FEATURES • Fast Turn On • Fast Turn Off • Low Input Current • Isolation Test Voltage, 5.
Siemens Semiconductor Group
22
BCV62C - PNP Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching)
PNP Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emit.
Siemens Semiconductor Group
22
IL410 - RIAC DRIVER OPTOCOUPLER
IL410 ZERO VOLTAGE CROSSING 600 V TRIAC DRIVER OPTOCOUPLER FEATURES • On-State Current, 300 mA • Zero Voltage Crossing • Blocking Voltage, 600 V • Iso.
Siemens Semiconductor Group
21
IL420 - 600 V TRIAC DRIVER OPTOCOUPLER
IL420 600 V TRIAC DRIVER OPTOCOUPLER FEATURES • High Input Sensitivity IFT=2 mA • Blocking Voltage, 600 V • 300 mA On-State Current • High Static dv/d.
Siemens Semiconductor Group
20
BAR63-05W - Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR 63 ... W Silicon PIN Diode • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance • For frequencies up .
Siemens Semiconductor Group
20
Q62702-A917 - Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode)
Silicon Switching Diodes BAS 79 A … BAS 79 D Switching applications q High breakdown voltage q Common cathode q Type BAS 79 A BAS 79 B BAS 79 C BAS.
Siemens Semiconductor Group
19
Q62702-C633 - PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage)
PNP Silicon AF Transistors BCX 78 BCX 79 q q q q q High current gain Low collector-emitter saturation voltage Low noise at 1 kHz Low noise at low f.
Siemens Semiconductor Group
18
BAR63-06W - Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR 63 ... W Silicon PIN Diode • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance • For frequencies up .
Siemens Semiconductor Group
18
Q62702-B372 - Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes)
BB 804 Silicon Variable Capacitance Diode q q q q BB 804 For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes Unif.
Siemens Semiconductor Group
18
IL215A - PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER
IL215A/216A/217A PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER • FEATURES • High Current Transfer Ratio, IF=1 mA IL215A—20% Minimum IL216A—5.
Siemens Semiconductor Group
17
BAR80 - Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss)
BAR 80 l l l Silicon RF Switching Diode Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss Type BAR 80 Ma.
Siemens Semiconductor Group
16
BXY43-FP - HiRel Silicon PIN Diode
HiRel Silicon PIN Diode Features ¥ HiRel Discrete and Microwave Semiconductor ¥ Current controlled RF resistor for RF attenuators and switches ¥ High .
Siemens Semiconductor Group
16
BGA318 - Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz)
BGA 318 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Ω-gain block • 16 dB typical gain at 1.0 GHz • 12 dBm typical P-1dB at 1.0 GHz.
Siemens Semiconductor Group
16
ILQ66 - PHOTODARLINGTON OPTOCOUPLER
IL66 SERIES DUAL CHANNEL ILD66 SERIES QUAD CHANNEL ILQ 66 SERIES SINGLE CHANNEL PHOTODARLINGTON OPTOCOUPLER FEATURES • Internal RBE for High Stability.
Siemens Semiconductor Group
15
BAR64-05W - Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz)
BAR 64 ... W Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz • Low resist.