Siemens Semiconductor Group IL Datasheet | Pinout, Features, Price Comparison & PDF

Silizium-PIN-Fotodiode NEU: in SMT und als Reverse Gullwing Silicon PIN Photodiode NEW: in SMT and as Reverse Gullwing 5.4 4.9 4.5 4.3 BPW 34 BPW 34

CGY 121 A GaAs MMIC Preliminary Datasheet l l l l l l l RF-in; -Vg Vcontrol 6 RF-GND 5 4 Variable gain amplifier (MMIC-Amplifier) for mobile communi

BAR 81W Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss

BAS 16-03W Silicon Switching Diode Preliminary data • For high-speed switching applications 2 1 VPS05176 Type BAS 16-03W Marking B Ordering Code

Silicon Spreading Resistance Temperature Sensor in Leaded Plastic Package Features • Temperature dependent Resistor with Positive Temperature Coeffici

NPN Silicon AF Transistors High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 636, BC 638

BF 1005 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized

IL300 LINEAR OPTOCOUPLER FEATURES • Couples AC and DC signals • 0.01% Servo Linearity • Wide Bandwidth, >200 KHz • High Gain Stability, ±0.005%/C • Lo

BF 1009 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9 V • Integrated stabilized

Silicon N Channel MOSFET Triode q q BF 987 For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability Type BF

Silicon Schottky Diodes q q q BAS 125 … For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused

BAS 16-02W Silicon Switching Diode Preliminary data • For high-speed switching applications 2 1 VES05991 Type BAS 16-02W Marking 3 Ordering Code

BCR 555 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor (R1 = 2.2kΩ, R2 = 10kΩ) T

BP 103 B BP 103 BF .NPN-Silizium-Fototransistor NEU: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor NEW: Silicon N

SIEGET® 25 NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstan

PNP Silicon AF Transistors High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 635, BC 637