Siemens Semiconductor Group IL Datasheet | Specifications & PDF Download

CGY 121 A GaAs MMIC Preliminary Datasheet l l l l l l l RF-in; -Vg Vcontrol 6 RF-GND 5 4 Variable gain amplifier (MMIC-Amplifier) for mobile communi

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Silizium-PIN-Fotodiode NEU: in SMT und als Reverse Gullwing Silicon PIN Photodiode NEW: in SMT and as Reverse Gullwing 5.4 4.9 4.5 4.3 BPW 34 BPW 34

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Silicon Spreading Resistance Temperature Sensor in Leaded Plastic Package Features • Temperature dependent Resistor with Positive Temperature Coeffici

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ILD205/206/207/211/213/217 FEATURES • Two Channel Coupler • Industry Standard SOIC-8 Surface Mountable Package • Standard Lead Spacing of .05 • Avail

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BAT 62-03W Silicon Schottky Diode • Low Barrier diode for detectors up to GHz frequencies ESD: ElectroStatic Discharge sensitive device, observe hand

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC327 PNP general purpose transistor Product specification Supersedes data of 1997 Mar 10 1

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SIEMENS PNP Silicon Darlington Transistors High current gain High collector current Low collector-emitter Saturation vottage Complementary types: BC 8

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Silicon RF Switching Diode q BA 582 For low-loss VHF band switching in TV/VTR tuners Type BA 582 Marking blue S Ordering Code Pin Configuration Q

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Silicon Schottky Diode q q q q q q BAT 32 RF detector Low-power mixer Zero bias Very low capacitance For frequencies up to 18 GHz HiRel/Mil-tested d

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