Silicon Group Datasheet | Specifications & PDF Download

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Silizium-PIN-Fotodiode NEU: in SMT und als Reverse Gullwing Silicon PIN Photodiode NEW: in SMT and as Reverse Gullwing 5.4 4.9 4.5 4.3 BPW 34 BPW 34

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BAR 81W Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss

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Silicon Schottky Diode BAT 65 Features • Low-power Schottky rectifier diode • For low-loss, fast-recovery rectification, meter protection, bias isol

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BF 1005 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized

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Silicon Schottky Diode Preliminary Data DBS mixer application to 12 GHz q Low noise figure q Medium barrier type q BAT 14-098 ESD: Electrostatic dis

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Silicon Schottky Diode Preliminary Data DBS mixer application to 10 GHz Low noise figure q Low barrier type q q BAT 15-098 ESD: Electrostatic discha

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BF 1012 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 12V • Integrated stabilized

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NPN Silicon AF Switching Transistor For general AF applications q High breakdown voltage q Low collector-emitter saturation voltage q Complementary ty

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NPN Silicon AF Transistors High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 636, BC 638

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SIEMENS PNP Silicon Darlington Transistors High current gain High collector current Low collector-emitter Saturation vottage Complementary types: BC 8

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BB 914 Silicon Variable Capacitance Diode • For FM radio tuner with extended frequency band • High tuning ratio low supply voltage (car radio) • Monol

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BCR 141S NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface, driver circuit • Two (galvanic) internal isolated Transistors

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BF 1009S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias netwo

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BCR 533 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=10kΩ, R2=10kΩ) T

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BAR 64 W Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz • Low resist

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Silicon Schottky Diodes q q q BAS 125 … For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused

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