Silicon Group Datasheet | Specifications & PDF Download

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Silizium-PIN-Fotodiode NEU: in SMT und als Reverse Gullwing Silicon PIN Photodiode NEW: in SMT and as Reverse Gullwing 5.4 4.9 4.5 4.3 BPW 34 BPW 34

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC327 PNP general purpose transistor Product specification Supersedes data of 1997 Mar 10 1

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PNP Silicon AF Transistors High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 635, BC 637

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Silicon Spreading Resistance Temperature Sensor in Leaded Plastic Package Features • Temperature dependent Resistor with Positive Temperature Coeffici

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BP 103 B BP 103 BF .NPN-Silizium-Fototransistor NEU: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor NEW: Silicon N

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SIEMENS PNP Silicon Darlington Transistors High current gain High collector current Low collector-emitter Saturation vottage Complementary types: BC 8

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Silicon RF Switching Diode q BA 582 For low-loss VHF band switching in TV/VTR tuners Type BA 582 Marking blue S Ordering Code Pin Configuration Q

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BCR 142 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, drver circuit • Built in bias resistor (R1=22kΩ, R2=47kΩ) Ty

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PNP Silicon AF Transistors BCX 78 BCX 79 q q q q q High current gain Low collector-emitter saturation voltage Low noise at 1 kHz Low noise at low f

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Silicon Variable Capacitance Diode BB 639 q For tuning of extended frequency bands in VHF TV/VTR tuners Type Ordering Code (tape and reel) Q62702

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Silicon Spreading Resistance Temperature Sensor in Robust Threaded Metal Housing Features • Temperature dependent Resistor with Positive Temperature C

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NPN Silicon Darlington Transistors BC 875 … BC 879 High current gain q Low collector-emitter saturation voltage q Complementary types: BC 876, BC 87

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Silicon Schottky Diodes General-purpose diodes for high-speed switching q Circuit protection q Voltage clamping q High-level detecting and mixing Avai

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BCR 555 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor (R1 = 2.2kΩ, R2 = 10kΩ) T

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Silicon Tuning Diode BB 833 Features Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units q High capacitance ratio

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http://www.chipdocs.com http://www.chipdocs.com

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BP 103 NPN-Silizium-Fototransistor Silicon NPN Phototransistor BP 103 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise sp

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