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2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group acco

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ST 2SA1270 PNP Silicon Epitaxial Planar Transistor for switching and general purpose applications. The transistor is subdivided into two groups O and

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ST 2SC828 / 828A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. These transistors are subdivided into three grou

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ST 2N3903 / 2N3904 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the PNP transistors 2N3905

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ST 2SC828 / 828A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. These transistors are subdivided into three grou

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DC COMPONENTS CO., LTD. R 1A1 THRU 1A7 RECTIFIER SPECIALISTS TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT

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2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group acco

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PLASTIC SILICON RECTIFIERS CT4A01 thru CT4A07 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 4.0 Amperes FEATURES Low cost Diffused junction L

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www.DataSheet4U.com PS223 Version Issue Date File Name Total Pages : A.006 : 2009/05/19 : SP-PS223-A.006.doc : 11 4-Channel Secondary Monitoring IC

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ST 2SC1740 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups Q, R, S

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UNISONIC TECHNOLOGIES CO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION  FEATUR

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ST 2SA1268 PNP Silicon Epitaxial Planar Transistor For high voltage applications. The transistor is subdivided into two groups, G and L according to i

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2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group acco

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ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Medium Power Transistors for driver stages of audio / video amplifiers Absolute Maxi

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UTC 2N3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc(max

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UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  FEATURES * Collector-base voltage: V(BR)CBO=600V * C

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2SK1056, 2SK1057, 2SK1058 Silicon N Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Featu

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www.DataSheet4U.net DM134、DM135、DM136 Version : A.013 Issue Date : 2006/8/1 File Name : SP-DM134,135,136-A.013.doc Total Pages : 20 16-Bit Constant

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ST 8550 (1.5A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low powe

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ST 2SC458 NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three group, B, C and D acco

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