Silikron Semiconductor
SSF1N80G5 - MOSFET
Main Product Characteristics:
VDSS
800V
RDS(on) ID
13Ω (typ.) 1A
Features and Benefits:
SOT223
Advanced MOS
(4 views)
Silikron Semiconductor Co
SSF3324 - MOSFET
Main Product Characteristics:
VDSS
30V
RDS(on) 26.5mΩ(typ.)
ID
5.8A ①
SSF3324
SOT-23
Marking and pin Assignments
Schematic Diagram
Features
(4 views)
Silikron Semiconductor
SSF3339 - MOSFET
Main Product Characteristics:
VDSS RDS(on)
ID
-30V 37mΩ (typ.)
-4.1A ①
SOT-23
Features and Benefits:
Advanced MOSFET process technology Specia
(4 views)
Silikron Semiconductor
SSF7509J7 - MOSFET
Main Product Characteristics:
VDSS
80V
RDS(on) 7.5mΩ(typ.)
ID 70A
Features and Benefits:
PQFN5*6
Advanced MOSFET process technology Specia
(3 views)
Silikron Semiconductor Co
SSF2336 - Battery protection
www.DataSheet4U.com
SSF2336
DESCRIPTION
The SSF2336 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with
(3 views)
Silikron Semiconductor Co
SSF3338 - MOSFET
SSF3338
www.DataSheet4U.com
DESCRIPTION
The SSF3338 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is
(3 views)
Silikron Semiconductor
SSF3314E - MOSFET
SSF3314E
DESCRIPTION
The SSF3314E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l
(3 views)
Silikron Semiconductor
SSF3416 - MOSFET
SSF3416
DESCRIPTION
The SSF3416 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as
(3 views)
Silikron Semiconductor
SSF2307B - MOSFET
SSF2307B
DESCRIPTION
The SSF2307B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l
(2 views)
Silikron Semiconductor
SSF2305 - MOSFET
SSF2305
DESCRIPTION
The SSF2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low
(2 views)
Silikron Semiconductor
SSF8N80ZF - MOSFET
Main Product Characteristics:
SSF8N80ZF
VDSS
800V
RDS(on) 1.1Ω (typ.)
ID 8A Features and Benefits:
TO-220F
(2 views)
Silikron Semiconductor
SSF4031C1 - MOSFET
Main Product Characteristics:
VDSS
-40V
RDS(on) 24mohm(typ.)
ID -30A Features and Benefits:
TO-252
Advanced MOSFET process technology Specia
(2 views)
Silikron Semiconductor
SSFT4002 - MOSFET
Main Product Characteristics:
SSFT4002
VDSS RDS(on)
40V 2.1 mohm
SSSSFFTT34900062
ID 220A
Features and Benefits:
Advanced trench MOSFET process
(2 views)
Silikron Semiconductor
SSFT4003A - MOSFET
Main Product Characteristics:
VDSS
40V
RDS(on) 2.4mΩ(typ.)
ID 200A ① Features and Benefits:
TO-220 SSFT4003
Adv
(2 views)
Silikron Semiconductor Co
SSF1016 - Power switching application
www.DataSheet4U.com SSF1016
Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and
(2 views)
Silikron Semiconductor Co
SSF2301C - PWM applications
SSF2301C
www.DataSheet4U.com
DESCRIPTION
The SSF2301C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation wit
(2 views)
Silikron Semiconductor Co
SSF2302 - Battery protection
www.DataSheet4U.com
SSF2302
DESCRIPTION
The SSF2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with
(2 views)
Silikron Semiconductor Co
SSF2306B - Battery protection
SSF2306B
www.DataSheet4U.com
DESCRIPTION
The SSF2306B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation wit
(2 views)
Silikron Semiconductor Co
SSF2316E - Battery protection
SSF2316E
www.DataSheet4U.com
GENERAL FEATURES
● VDS = 20V,ID = 7A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ VGS=4V RDS(ON)
(2 views)
Silikron Semiconductor Co
SSF2334 - Battery protection
www.DataSheet4U.com
SSF2334
DESCRIPTION
The SSF2334 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with
(2 views)