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Std1 Matched Datasheet



Part Number Description Manufacture
D16861
FSTD16861
s 4: switch connection between two ports. s Minimal propagation delay through the switch. s Low lCC. s Zero bounce in flow-through mode. s Control inputs compatible with TTL level. s TruTranslation¥ voltage translation from 5.0V inputs to 3.3V output
Manufacture
Fairchild Semiconductor
STD1862
NPN Silicon Power Transistor

• High current : IC=2A
• Complementary pair with STB1277 Ordering Information Type NO. STD1862 Marking STD1862 Package Code TO-92 Outline Dimensions 3.45±0.1 4.5±0.1 2.25±0.1 unit : mm 4.5±0.1 0.4±0.02 2.06±0.1 14.0±0.40 1.27 Typ. 2.54 Typ.
Manufacture
AUK
STD14NM50N
Power MOSFET
Type STB14NM50N STD14NM50N STF14NM50N STP14NM50N


■ VDSS @ TJmax RDS(on) max ID 1 3 3 DPAK 550 V 0.29 Ω 12 A 1 2 TO-220 100% avalanche tested Low input capacitances and gate charge 1 3 2 3 1 Low gate input resistance TO-220FP D2PAK
Manufacture
ST Microelectronics
STD13007
NPN Silicon Power Transistor
S
• High speed switching a t=400V
• VCEO(sus) a
• Suitable .D for Switching Regulator and Motor Control w w Ordering Information w Type NO. STD13007 Marking STD13007 STD13007 NPN Silicon Power Transistor Package Code TO-220AB Outline Dimensions w
Manufacture
AUK
D1NC60
STD1NC6
= 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 600 600 ±30 1.4 0.9 5.6 35 0.28 3.5
Manufacture
STMicroelectronics
STD180N4F6
N-channel Power MOSFET
Order code STD180N4F6 VDS 40 V RDS(on) max. 2.8 mΩ ID 80 A PTOT 130 W
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss Applications
 Switching applications
 Power tools Description This d
Manufacture
STMicroelectronics
11NM65N
STD11NM65N
Order codes VDSS @ TJmax RDS(on) max ID STD11NM65N STF11NM65N STFI11NM65N STP11NM65N 710 V 0.455 Ω 11 A
• 100% avalanche tested
• Low input capacitance and gate charge
• low gate input resistance Figure 1. Internal schematic diagram ' Ć7$
Manufacture
STMicroelectronics
STD18N55M5
N-Channel MOSFET

·With To-252(DPAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE M
Manufacture
INCHANGE
FSTD16861
20-Bit Bus Switch with Level Shifting
s 4Ω switch connection between two ports. s Minimal propagation delay through the switch. s Low lCC. s Zero bounce in flow-through mode. s Control inputs compatible with TTL level. s TruTranslation voltage translation from 5.0V inputs to 3.3V output
Manufacture
Fairchild Semiconductor
STD100
Duct Temperature Sensor
Temperatures: Ambient. . . . . . . . . . . . . . . . . . min. -40°C (-40 °F) . . . . . . . . . . . . . . . . . . . . . . . .max. 130°C (266 °F) Operating. . . . . . . . . . . . . . . . . min. -40°C (-40 °F) . . . . . .
Manufacture
Schneider

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