T060 Datasheet | Specifications & PDF Download

N N-CHANNEL IGBT R TT060U060EQ MAIN CHARACTERISTICS IC VCES Vcesat-ty（p Vge=15V） 60 A 600V 1.9V Package   PFC  APPLICATIONS  Welding c

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Rato RATO Technology Inc., RT0608 6 TONES SIREN/ALARM SOUND GENERATOR The RT0608 is a CMOS design for six different alarm sounds application. The sou

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Date:- 27 Feb, 2015 Data Sheet Issue:- P1 Prospective Data Insulated Gate Bi-Polar Transistor Type T0600AF65G Absolute Maximum Ratings VCES VCES VC

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I27123 rev. C 02/03 50MT060ULS LOW SIDE CHOPPER IGBT MTP Ultrafast Speed IGBT Features • Gen. 4 Ultrafast Speed IGBT Technology • HEXFRED TM Diode

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MCS 0402, MCT 0603, MCU 0805, MCA 1206 - Professional www.vishay.com Vishay Beyschlag Professional Thin Film Chip Resistors MCS 0402, MCT 0603, MC

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www.DataSheet4U.com ® T0605xH T0609xH SENSITIVE GATE TRIACS FEATURES IT(RMS) = 6A VDRM = 400V to 800V IGT ≤ 5mA to ≤ 10mA A1 A2 G DESCRIPTION The

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www.DataSheet4U.com ® T0605xH T0609xH SENSITIVE GATE TRIACS FEATURES IT(RMS) = 6A VDRM = 400V to 800V IGT ≤ 5mA to ≤ 10mA A1 A2 G DESCRIPTION The

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N N-CHANNEL IGBT R ATT060U060EQ MAIN CHARACTERISTICS Package IC VCES Vcesat-ty（p Vge=15V） 60 A 600V 1.9V   PFC  APPLICATIONS  Welding

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www.DataSheet4U.com ® T0605xH T0609xH SENSITIVE GATE TRIACS FEATURES IT(RMS) = 6A VDRM = 400V to 800V IGT ≤ 5mA to ≤ 10mA A1 A2 G DESCRIPTION The

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WESTCODE An IXYS Company Date:- 23 Jul, 2004 Data Sheet Issue:- 1 Fast Recovery Diode Type M2408N#020 to M2408N#060 Old Type No.: SM02-06CXC504 Abs

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Multilayer Ceramic Chip Capacitors FEATURES • X7R, X5R AND Y5V DIELECTRICS • HIGH CAPACITANCE & LOW PROFILE • RoHS COMPLIANT • SAC SOLDER COMPATIBLE R

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FT06 H HIGH COMMUTATION TRIAC TO220-AB On-State Current 6 Amp Gate Trigger Current ≤ 25 mA to ≤ 50 mA Off-State Voltage 200 V ÷ 600 V MT2 MT1 MT

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www.DataSheet4U.com ® T0605xH T0609xH SENSITIVE GATE TRIACS FEATURES IT(RMS) = 6A VDRM = 400V to 800V IGT ≤ 5mA to ≤ 10mA A1 A2 G DESCRIPTION The

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www.DataSheet4U.com ® T0605xH T0609xH SENSITIVE GATE TRIACS FEATURES IT(RMS) = 6A VDRM = 400V to 800V IGT ≤ 5mA to ≤ 10mA A1 A2 G DESCRIPTION The

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www.DataSheet4U.com ® T0605xH T0609xH SENSITIVE GATE TRIACS FEATURES IT(RMS) = 6A VDRM = 400V to 800V IGT ≤ 5mA to ≤ 10mA A1 A2 G DESCRIPTION The

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SCT060HU75G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 750 V, 58 mΩ typ., 30 A in an HU3PAK package TAB Gate (1) Driver source (2) 7

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N N-CHANNEL IGBT R TT060U065FQ MAIN CHARACTERISTICS IC VCE Vcesat-typ 60A 650V 1.9V Package PFC  APPLICATIONS Power factor corrector (PFC

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() CRST060N08N3,CRSS057N08N3 SkyMOS3 N-MOSFET 80V, 5mΩ, 100A Features • Uses CRM(CQ) advanced SkyMOS3 technology • Extremely low on-resistance RDS(o

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Target Data 05/01 25MT060WF FULL-BRIDGE IGBT MTP Warp Speed IGBT Features • Gen. 4 Warp Speed IGBT Technology • HEXFRED TM Antiparallel Diodes wit

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