AOT16N50/AOTF16N50 500V, 16A N-Channel MOSFET Gen.
GPT16N50 - POWER FIELD EFFECT TRANSISTOR
GPT16N50 / GPT16N50D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to pro.T16N50 - AOT16N50
AOT16N50/AOTF16N50 500V, 16A N-Channel MOSFET General Description Product Summary The AOT16N50 & AOTF16N50 have been fabricated using an advanced h.GPT16N50D - POWER FIELD EFFECT TRANSISTOR
GPT16N50 / GPT16N50D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to pro.AOT16N50 - N-Channel MOSFET
AOT16N50/AOTF16N50 500V, 16A N-Channel MOSFET General Description Product Summary The AOT16N50 & AOTF16N50 have been fabricated using an advanced h.AOT16N50 - N-Channel MOSFET
isc N-Channel MOSFET Transistor AOT16N50 FEATURES ·Drain Current –ID= 16A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-R.