GPT16N50 POWER FIELD EFFECT TRANSISTOR

Description

GPT16N50 / GPT16N50D POWER FIELD EFFECT TRANSISTOR GENERAL .
FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance.

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Datasheet Specifications

Part number: GPT16N50
Manufacturer: Greatpower
File Size: 1.18 MB
Datasheet: GPT16N50-Greatpower.pdf
Description: POWER FIELD EFFECT TRANSISTOR

Features

* This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offer

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. Robust High Voltage Termination Aval

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GPT16N50 POWER FIELD EFFECT TRANSISTOR Greatpower

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