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GPT16N50D, GPT16N50 POWER FIELD EFFECT TRANSISTOR

GPT16N50D Description

GPT16N50 / GPT16N50D POWER FIELD EFFECT TRANSISTOR GENERAL .
FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance.

GPT16N50D Features

* This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offer

GPT16N50D Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. Robust High Voltage Termination Aval

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: GPT16N50D, GPT16N50. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
GPT16N50D, GPT16N50
Manufacturer
Greatpower
File Size
1.18 MB
Datasheet
GPT16N50-Greatpower.pdf
Description
POWER FIELD EFFECT TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: GPT16N50D, GPT16N50.
Please refer to the document for exact specifications by model.

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POWER FIELD EFFECT TRANSISTOR Greatpower
Greatpower GPT16N50D-like datasheet