T2G Datasheet | Specifications & PDF Download

PH009T2G Description： This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be use

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74HC2G66; 74HCT2G66 Dual single-pole single-throw analog switch Rev. 10 — 3 October 2013 Product data sheet 1. General description The 74HC2G66;

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Large Can Aluminum Electrolytic Capacitors T-UP Series 85°C, 3000 hours 4 or 5 terminal mounting provides stability and keyed polarity Extended CV

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ALUMINUM ELECTROLYTIC CAPACITORS PT Miniature Sized, High Ripple Current, Long Life series High ripple current. Suited for ballast application. Compl

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ALUMINUM ELECTROLYTIC CAPACITORS PT Miniature Sized, High Ripple Current, Long Life series High ripple current. Suited for ballast application. Compl

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74HC2G00; 74HCT2G00 Dual 2-input NAND gate Rev. 6 — 20 November 2018 Product data sheet 1. General description The 74HC2G00; 74HCT2G00 is a dual 2-

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74HC2G66-Q100; 74HCT2G66-Q100 Dual single-pole single-throw analog switch Rev. 2 — 6 November 2018 Product data sheet 1. General description The 7

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74HC2G66; 74HCT2G66 Dual single-pole single-throw analog switch Rev. 11 — 6 November 2018 Product data sheet 1. General description The 74HC2G66;

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CYT4BF TRAVEO™ T2G 32-bit Automotive MCU Based on Arm® Cortex®-M7 dual General description CYT4BF is a family of TRAVEO™ T2G microcontrollers targeted

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MEST2GFC-010-25 PIN DIODE SWITCH ELEMENT (MESTEG) Description A broadband medium power series switch element in chip form (26X12 mils). This is an E

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MEST2G-050-80 Pin Diode Switch Element Features  Supports up to 50 W Power  Low Insertion Loss: 0.1 dB up to 2.5 GHz  High Isolation: 16 dB @ 1 GHz

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MEST2G-150-20 PIN DIODE SWITCH ELEMENT (CM26) non-hermetic Bolt Down Package Description The MEST2G-150-020-CM26 is a Thermal to Ground Series diode

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MEST2G-010-20 Pin Diode Switch Element Features  Supports up to 10 W Power  Low Insertion Loss: 0.5 dB up to 2.7 GHz  High Isolation: 23 dB up to 2

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ESMT DDR3(L) SDRAM (Preliminary) Feature Interface and Power Supply ˗ SSTL_15: VDD/VDDQ = 1.5V(±0.075V) ˗ SSTL_135: VDD/VDDQ = 1.35V(-0.067V/+0.1V)

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ESMT DDR3(L) SDRAM Feature  Interface and Power Supply ˗ SSTL_15: VDD/VDDQ = 1.5V(±0.075V) ˗ SSTL_135: VDD/VDDQ = 1.35V(-0.067V/+0.1V)  JEDEC DDR3(L

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INTEGRATED CIRCUITS DATA SHEET 74HC2G00; 74HCT2G00 Dual 2-input NAND gate Product specification Supersedes data of 2002 Jul 10 2003 Feb 12 Philips S

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www.DataSheet4U.com NSS40500UW3T2G 40 V, 6.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are mi

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www.DataSheet4U.com ST2G3236 2-bit dual supply bus transceiver level translator with a side series resistor Features ■ High speed: – tPD = 6.2ns (Ma

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F1T1G THRU F1T7G 1.0 AMP. Glass Passivated Fast Recovery Rectifiers Voltage Range 50 to 1000 Volts Current 1.0 Ampere Features Low forward voltage dr

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74AHC2G241; 74AHCT2G241 Dual buffer/line driver; 3-state Rev. 3 — 13 May 2013 Product data sheet 1. General description The 74AHC2G241; 74AHCT2G24

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