TC2201 Datasheet | Specifications & PDF Download

TC2201 Plastic Packaged Low Noise PHEMT GaAs FETs

TC2201 REV4_20070504 Plastic Packaged Low Noise P.

Silicon NPN Power Transistors

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KTC2201 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)C

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Plastic Packaged Low Noise PHEMT GaAs FETs

TC2201 REV4_20070504 Plastic Packaged Low Noise PHEMT GaAs FETs PHOTO ENLARGEMENT FEATURES • • • • • • • • 1.5 dB Typical Noise Figure at 12 GHz Hig

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P-Channel Enhancement Mode Field Effect Transistor

S amHop Microelectronics C orp. S T C 2201 Mar 15 2005 ver1.2 P -C hannel E nhancement Mode Field E ffect Trans is tor P R ODUC T S UMMAR Y V DS S -

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