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KTC2201 - Silicon NPN Power Transistors

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS

Switching regulator applicaition.

High voltage switching application.

High speed DC-DC converter application.

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KTC2201 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Switching regulator applicaition. ·High voltage switching application. ·High speed DC-DC converter application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 8A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3A 40 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.