TE36 Datasheet | Specifications & PDF Download

NTE363 Silicon NPN Transistor RF Power Amp, PO = 4W Description: The NTE363 is a 12.5V epitaxial silicon NPN planer transistor designed primarily for

(16 views)

NTE36 (NPN) & NTE37 (PNP) Silicon Complementary Transistors AF Power Amplifier, High Current Switch Description: The NTE36 (NPN) and NTE37 (PNP) are s

(12 views)

NTE368 Silicon NPN Transistor RF Power Output PO = 60W @ 512MHz Description: The NTE368 is a silicon NPN transistor designed for 12.5 Volt UHF large–s

(12 views)

(12 views)

www.DataSheet4U.com NTE362 Silicon NPN Transistor RF Power Description: The NTE362 is designed for 7.0 to 15 volts, UHF large signal amplifier applic

(12 views)

(11 views)

NTE361 Silicon NPN Transistor RF Power Output PO = 2W @ 512MHz Description: The NTE361 is a silicon NPN transistor designed for 12.5 Volt UHF large–si

(10 views)

NTE365 Silicon NPN Transistor RF Power Output PO = 15W @ 512MHz Description: The NTE365 is a silicon NPN transistor designed for 12.5 Volt UHF large–s

(10 views)

NTE367 Silicon NPN Transistor RF Power Amplifier PO = 45W @ 512MHz Description: The NTE367 is a silicon NPN RF power transistor in a W65 type package

(10 views)

(10 views)

NTE366 Silicon NPN Transistor RF Power Output PO = 25W @ 512MHz Description: The NTE366 is a silicon NPN transistor designed for 12.5 Volt UHF large–s

(8 views)

NTE369 Silicon NPN Transistor TV Vertical Deflection, Switch Description: The NTE369 is an NPN transistor in a TO66 type case designed for high voltag

(7 views)

Date:- 9th May, 2013 Data Sheet Issue:- A1 Provisional Data Rectifier Diode Types W5984T#360 and W5984T#400 Development Type No.: WX205T#400 Absolut

(7 views)

 Product Introduction Microwave dielectric resonator material is the cornerstone of future communications technology. Features :  High Q Value.  E

(6 views)

STE36N50-DK N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR AND ULTRA-FAST DIODE IN ISOTOP PACKAGE TYPE STE36N50-DK s V DSS 500 V R DS( on) < 0.14

(6 views)

STE36N50-DA N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR AND ULTRA-FAST DIODE IN ISOTOP PACKAGE TYPE STE36N50-DA s s s s s V DSS 500 V R DS( on

(5 views)