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STE36N50-DK N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package

STE36N50-DK Description

STE36N50-DK N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR AND ULTRA-FAST DIODE IN ISOTOP PACKAGE TYPE STE36N50-DK s V DSS 500 V R DS( on) < 0.14.

STE36N50-DK Applications

* LOW GATE CHARGE MOSFET TURBOSWITCH DIODE INCORPORATED HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT EXTREMELY LOW Rth JUNCTION TO CASE VERY LOW DRAIN TO CASE CAPACITANCE VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPICALLY < 5 nH) ISOLA

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N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode Isotop Package ST Microelectronics
ST Microelectronics STE36N50-DK-like datasheet