Datasheet Specifications
- Part number
- STE36N50-DK
- Manufacturer
- STMicroelectronics ↗
- File Size
- 166.88 KB
- Datasheet
- STE36N50-DK_STMicroelectronics.pdf
- Description
- N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package
Description
STE36N50-DK N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR AND ULTRA-FAST DIODE IN ISOTOP PACKAGE TYPE STE36N50-DK s V DSS 500 V R DS( on) < 0.14.
Applications
* LOW GATE CHARGE MOSFET TURBOSWITCH DIODE INCORPORATED HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT EXTREMELY LOW Rth JUNCTION TO CASE VERY LOW DRAIN TO CASE CAPACITANCE VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPICALLY < 5 nH) ISOLASTE36N50-DK Distributors
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