STE38NB50

N - CHANNEL PowerMESH MOSFET

ST Microelectronics

STE38NB50 General Description

Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avala.

STE38NB50 Datasheet (280.95 KB)

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STE38NB50

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STMicroelectronics ↗

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280.95 KB

Description:

N - channel powermesh mosfet.
® STE38NB50 N - CHANNEL 500V - 0.11 Ω - 38A - ISOTOP PowerMESH™ MOSFET TYPE STE38NB50 s s s s s s s V DSS 500 V R DS(on) < 0.13 Ω ID 38 A TYPICA.

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STE38NB50 CHANNEL PowerMESH MOSFET ST Microelectronics

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STE38NB50 General Description

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