STE36N50-DA Datasheet - ST Microelectronics

STE36N50-DA N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package

STE36N50-DA N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR AND ULTRA-FAST DIODE IN ISOTOP PACKAGE TYPE STE36N50-DA s s s s s V DSS 500 V R DS( on) < 0.14 Ω ID 36 A 4 3 s s s s s LOW GATE CHARGE MOSFET TURBOSWITCH DIODE INCORPORATED HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT EXTREMELY LOW Rth JUNCTION TO CASE VERY LOW DRAIN TO CASE CAPACITANCE VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPICALLY < 5 nH) ISOLATED PACKAGE U.

STE36N50-DA Datasheet (166.75 KB)

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Datasheet Details

Part number:

STE36N50-DA

Manufacturer:

STMicroelectronics ↗

File Size:

166.75 KB

Description:

N-channel enhancement mode power mos transistor and ultra-fast diode in isotop package.

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STE36N50-DA N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode Isotop Package ST Microelectronics

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