TF2110 / TF2113 Features D rive two N-channe.
Telefunken
TF2110 - (TF2110 / TF2113) High-Side / Low-Side Gate Drivers
TF2110 / TF2113 Features D rive two N-channel MOSFETs or IGBTs in high-side / low side configuration T he floating high-side, drivers drive ga.
Telefunken
TF2113 - (TF2110 / TF2113) High-Side / Low-Side Gate Drivers
TF2110 / TF2113 Features D rive two N-channel MOSFETs or IGBTs in high-side / low side configuration T he floating high-side, drivers drive ga.
Infineon Technologies AG
PTF211301 - LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
PTF211301 LDMOS RF Power Field Effect Transistor 130 W, 2110–2170 MHz Description The PTF211301 is a 130–W, internally matched GOLDMOS FET intended f.
Infineon Technologies AG
PTF211301A - LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
PTF211301 LDMOS RF Power Field Effect Transistor 130 W, 2110–2170 MHz Description The PTF211301 is a 130–W, internally matched GOLDMOS FET intended f.