Part number:
PTF211301A
Manufacturer:
Infineon ↗ Technologies AG
File Size:
449.03 KB
Description:
Ldmos rf power field effect transistor 130 w/ 2110-2170 mhz.
* Broadband internal matching Typical two
* carrier WCDMA performance at 2140 MHz - Average output power = 28 W - Linear Gain = 13.5 dB - Efficiency = 25% - Intermodulation distortion =
* 37 dBc - Adjacent channel power =
* 42 dBc Typical CW performance, 2170 MH
PTF211301A Datasheet (449.03 KB)
PTF211301A
Infineon ↗ Technologies AG
449.03 KB
Ldmos rf power field effect transistor 130 w/ 2110-2170 mhz.
📁 Related Datasheet
PTF211301 LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz (Infineon Technologies AG)
PTF211802 LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz (Infineon Technologies AG)
PTF211802A LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz (Infineon Technologies AG)
PTF211802E LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz (Infineon Technologies AG)
PTF210301 LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz (Infineon Technologies AG)
PTF210301A LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz (Infineon Technologies AG)
PTF210301E LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz (Infineon Technologies AG)
PTF210451 LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz (Infineon Technologies AG)
PTF210451E LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz (Infineon Technologies AG)
PTF210901 LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz (Infineon Technologies AG)
TAGS
Image Gallery