PTF211802 Datasheet, Mhz, Infineon Technologies AG

PTF211802 Features

• Mhz
• Broadband internal matching Typical two
    –carrier WCDMA performance - Average output power = 38 W - Gain = 15 dB - Efficiency = 25% - IM3 =
   &

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Part number:

PTF211802

Manufacturer:

Infineon ↗ Technologies AG

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169.15kb

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📄 Datasheet

Description:

Ldmos rf power field effect transistor 180 w/ 2110-2170 mhz. The PTF211802 is a 180 W, internally matched, laterally double  –diffused, GOLDMOS push  –pull FET intend

PTF211802 Application

• Applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features
• Broadba

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📁 Related Datasheet

PTF211802A - LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz (Infineon Technologies AG)
PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description The PTF211802 is a 180 W, internally matched, laterally double–diff.

PTF211802E - LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz (Infineon Technologies AG)
PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description The PTF211802 is a 180 W, internally matched, laterally double–diff.

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