PTF211802

LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz

Infineon Technologies AG

* Broadband internal matching Typical two

* carrier WCDMA performance - Average output power = 38 W - Gain = 15 dB - Efficiency = 25% - IM3 =

* 37 dBc - ACPR <

* 42 dBc Typical CW performance - Output power at P

* 1dB = 180 W - Efficiency = 50% Integrated

PTF211802

Infineon ↗ Technologies AG

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Ldmos rf power field effect transistor 180 w/ 2110-2170 mhz.

📁 Related Datasheet

PTF211802A LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz (Infineon Technologies AG)

PTF211802E LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz (Infineon Technologies AG)

PTF211301 LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz (Infineon Technologies AG)

PTF211301A LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz (Infineon Technologies AG)

PTF210301 LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz (Infineon Technologies AG)

PTF210301A LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz (Infineon Technologies AG)

PTF210301E LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz (Infineon Technologies AG)

PTF210451 LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz (Infineon Technologies AG)

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