PTF210301A Datasheet, Mhz, Infineon Technologies AG

PTF210301A Features

• Mhz
• Broadband internal matching Typical two
    –carrier WCDMA performance - Average output power = 7.0 W - Gain = 16 dB - Efficiency = 25% - IM3 =
   

PDF File Details

Part number:

PTF210301A

Manufacturer:

Infineon ↗ Technologies AG

File Size:

337.86kb

Download:

📄 Datasheet

Description:

Ldmos rf power field effect transistor 30 w/ 2110-2170 mhz. The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallizatio

PTF210301A Application

• Applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features
• Broadba

TAGS

PTF210301A

Infineon Technologies AG

📁 Related Datasheet

PTF210301 - LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz (Infineon Technologies AG)
PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for.

PTF210301E - LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz (Infineon Technologies AG)
PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for.

PTF210451 - LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz (Infineon Technologies AG)
PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description The PTF210451 is a 45 W internally matched GOLDMOS FET intended for .

PTF210451E - LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz (Infineon Technologies AG)
PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description The PTF210451 is a 45 W internally matched GOLDMOS FET intended for .

PTF210901 - LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz (Infineon Technologies AG)
PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description The PTF210901 is an internally matched 90 W GOLDMOS FET intended for.

PTF210901E - LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz (Infineon Technologies AG)
PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description The PTF210901 is an internally matched 90 W GOLDMOS FET intended for.

PTF211301 - LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz (Infineon Technologies AG)
PTF211301 LDMOS RF Power Field Effect Transistor 130 W, 2110–2170 MHz Description The PTF211301 is a 130–W, internally matched GOLDMOS FET intended f.

PTF211301A - LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz (Infineon Technologies AG)
PTF211301 LDMOS RF Power Field Effect Transistor 130 W, 2110–2170 MHz Description The PTF211301 is a 130–W, internally matched GOLDMOS FET intended f.

PTF211802 - LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz (Infineon Technologies AG)
PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description The PTF211802 is a 180 W, internally matched, laterally double–diff.

PTF211802A - LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz (Infineon Technologies AG)
PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description The PTF211802 is a 180 W, internally matched, laterally double–diff.