Datasheet Details
| Part number | PTF210901E | 
|---|---|
| Manufacturer | Infineon ↗ Technologies AG | 
| File Size | 266.35 KB | 
| Description | LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz | 
| Datasheet |  PTF210901E_InfineonTechnologiesAG.pdf | 
 
		  | Part number | PTF210901E | 
|---|---|
| Manufacturer | Infineon ↗ Technologies AG | 
| File Size | 266.35 KB | 
| Description | LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz | 
| Datasheet |  PTF210901E_InfineonTechnologiesAG.pdf | 
The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Carrier WCDMA Drive Up VDD = 28 V, IDQ = 1050 mA, f1 = 2140 MHz, f2 = 2150 MHz, 3GPP WCDMA signal, P/A R = 8.0 dB, 3.84 MHz BW -25 30 25 IM3 -35 20 -40 15 -45 Gain -50 -55 39 40 41 42 43 44 ACPR 10 5 Drain Efficiency
📁 PTF210901E Similar Datasheet
