PTF210901E Datasheet, Mhz, Infineon Technologies AG

PTF210901E Features

• Mhz
• Internal matching for wideband performance Typical two
    –carrier 3GPP WCDMA performance - Average output power = 19 W at
    –37 dBc - Effi

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PTF210901E

Manufacturer:

Infineon ↗ Technologies AG

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📄 Datasheet

Description:

Ldmos rf power field effect transistor 90 w/ 2110-2170 mhz. The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallizatio

PTF210901E Application

• Applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Two
    –Carrier WCDMA Dri

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PTF210901E

Infineon Technologies AG

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