PTF210301E Datasheet, Mhz, Infineon Technologies AG

PTF210301E Features

• Mhz
• Broadband internal matching Typical two
    –carrier WCDMA performance - Average output power = 7.0 W - Gain = 16 dB - Efficiency = 25% - IM3 =
   

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PTF210301E

Manufacturer:

Infineon ↗ Technologies AG

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📄 Datasheet

Description:

Ldmos rf power field effect transistor 30 w/ 2110-2170 mhz. The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallizatio

PTF210301E Application

• Applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features
• Broadba

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PTF210301E

Infineon Technologies AG

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