PTF210901 - LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz

Infineon Technologies AG

PTF210901 Datasheet Preview — Preview of PTF210901 PDF

Datasheet Details

Part number	PTF210901
Manufacturer	Infineon ↗ Technologies AG
File Size	266.35 KB
Description	LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz
Datasheet	PTF210901_InfineonTechnologiesAG.pdf

PTF210901 Product details

Description

The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Carrier WCDMA Drive Up VDD = 28 V, IDQ = 1050 mA, f1 = 2140 MHz, f2 = 2150 MHz, 3GPP WCDMA signal, P/A R = 8.0 dB, 3.84 MHz BW -25 30 25 IM3 -35 20 -40 15 -45 Gain -50 -55 39 40 41 42 43 44 ACPR 10 5 Drain Efficiency

Features

Internal matching for wideband performance Typical two.
carrier 3GPP WCDMA performance - Average output power = 19 W at.
37 dBc - Efficiency = 25% Typical CW performance - Output power at P.
1dB = 105 W - Gain = 15 dB - Efficiency = 53% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR at 28 V, 90 W (CW) output power.
-30 Efficiency (%), Gain (dB) IMD (dBc).

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Other Datasheets by Infineon Technologies AG

PTF210901E - LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz
PTF210301 - LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
PTF210301A - LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
PTF210301E - LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
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PTF210451E - LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz

Published: Apr 16, 2005 |