PTF210901
Infineon ↗ Technologies AG
266.35kb
Ldmos rf power field effect transistor 90 w/ 2110-2170 mhz. The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallizatio
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PTF210901E - LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz
(Infineon Technologies AG)
PTF210901
LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz
Description
The PTF210901 is an internally matched 90 W GOLDMOS FET intended for.
PTF210301 - LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
(Infineon Technologies AG)
PTF210301
LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz
Description
The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for.
PTF210301A - LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
(Infineon Technologies AG)
PTF210301
LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz
Description
The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for.
PTF210301E - LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
(Infineon Technologies AG)
PTF210301
LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz
Description
The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for.
PTF210451 - LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz
(Infineon Technologies AG)
PTF210451
LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz
Description
The PTF210451 is a 45 W internally matched GOLDMOS FET intended for .
PTF210451E - LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz
(Infineon Technologies AG)
PTF210451
LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz
Description
The PTF210451 is a 45 W internally matched GOLDMOS FET intended for .
PTF211301 - LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
(Infineon Technologies AG)
PTF211301
LDMOS RF Power Field Effect Transistor 130 W, 2110–2170 MHz
Description
The PTF211301 is a 130–W, internally matched GOLDMOS FET intended f.
PTF211301A - LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
(Infineon Technologies AG)
PTF211301
LDMOS RF Power Field Effect Transistor 130 W, 2110–2170 MHz
Description
The PTF211301 is a 130–W, internally matched GOLDMOS FET intended f.
PTF211802 - LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
(Infineon Technologies AG)
PTF211802
LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz
Description
The PTF211802 is a 180 W, internally matched, laterally double–diff.
PTF211802A - LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
(Infineon Technologies AG)
PTF211802
LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz
Description
The PTF211802 is a 180 W, internally matched, laterally double–diff.