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PTF210451E

LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz

PTF210451E Features

* Internal matching for wideband performance Typical two

* carrier WCDMA performance - Average output power = 11.5 W - Gain = 14 dB - Efficiency = 27% - IM3 =

* 37 dBc Typical CW performance - Output power at P

* 1dB = 50 W - Linear gain = 14 dB - Efficiency = 53

PTF210451E Datasheet (406.91 KB)

Preview of PTF210451E PDF

Datasheet Details

Part number:

PTF210451E

Manufacturer:

Infineon ↗ Technologies AG

File Size:

406.91 KB

Description:

Ldmos rf power field effect transistor 45 w/ 2110-2170 mhz.

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TAGS

PTF210451E LDMOS Power Field Effect Transistor 2110-2170 MHz Infineon Technologies AG

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