PTF210451E Datasheet, Mhz, Infineon Technologies AG

PTF210451E Features

• Mhz
• Internal matching for wideband performance Typical two
    –carrier WCDMA performance - Average output power = 11.5 W - Gain = 14 dB - Efficiency = 27% -

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PTF210451E

Manufacturer:

Infineon ↗ Technologies AG

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📄 Datasheet

Description:

Ldmos rf power field effect transistor 45 w/ 2110-2170 mhz. The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization

PTF210451E Application

• Applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features
• Interna

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PTF210451E

Infineon Technologies AG

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