PTF210451E Datasheet - Infineon Technologies AG

PTF210451E, LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz

PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110 *2170 MHz .
The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz.

datasheet Preview Page 1 from Datasheet4u.com

PTF210451E_InfineonTechnologiesAG.pdf

PTF210451E Datasheet Preview — Preview of PTF210451E PDF

Datasheet Details

Part number:

PTF210451E

Manufacturer:

Infineon ↗ Technologies AG

File Size:

406.91 KB

Description:

LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz

Features

* Internal matching for wideband performance Typical two
* carrier WCDMA performance - Average output power = 11.5 W - Gain = 14 dB - Efficiency = 27% - IM3 =
* 37 dBc Typical CW performance - Output power at P
* 1dB = 50 W - Linear gain = 14 dB - Efficiency = 53

PTF210451E Distributors

📁 Related Datasheet

PTF PTF08A-E PTF10007 PTF10009 PTF10015 PTF10019

📌 All Tags

PTF210451E LDMOS Power Field Effect Transistor 2110-2170 MHz Infineon Technologies AG

Infineon Technologies AG PTF210451E-like datasheet