Datasheet4U Logo Datasheet4U.com

PTF210451E LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz

PTF210451E Description

PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110 *2170 MHz .
The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz.

PTF210451E Features

* Internal matching for wideband performance Typical two
* carrier WCDMA performance - Average output power = 11.5 W - Gain = 14 dB - Efficiency = 27% - IM3 =
* 37 dBc Typical CW performance - Output power at P
* 1dB = 50 W - Linear gain = 14 dB - Efficiency = 53

📥 Download Datasheet

Preview of PTF210451E PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • PTF - Metal Film Resistors (Vishay)
  • PTF08A-E - Relay (Omron)
  • PTF10007 - 35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor (Ericsson)
  • PTF10009 - 85 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor (Ericsson)
  • PTF10015 - 50 Watts/ 300-960 MHz GOLDMOS Field Effect Transistor (Ericsson)
  • PTF10019 - 70 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor (Ericsson)
  • PTF10020 - 125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor (Ericsson)
  • PTF10021 - 30 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor (Ericsson)

📌 All Tags

Infineon Technologies AG PTF210451E-like datasheet