PTF211802E Datasheet - Infineon Technologies AG

PTF211802E, LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz

PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110 *2170 MHz .
The PTF211802 is a 180 W, internally matched, laterally double. diffused, GOLDMOS push. pull FET intended for WCDMA applications from 21.

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Datasheet Details

Part number:

PTF211802E

Manufacturer:

Infineon ↗ Technologies AG

File Size:

169.15 KB

Description:

LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz

Features

* Broadband internal matching Typical two
* carrier WCDMA performance - Average output power = 38 W - Gain = 15 dB - Efficiency = 25% - IM3 =
* 37 dBc - ACPR <
* 42 dBc Typical CW performance - Output power at P
* 1dB = 180 W - Efficiency = 50% Integrated

PTF211802E Distributors

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PTF211802E LDMOS Power Field Effect Transistor 180 2110-2170 MHz Infineon Technologies AG

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