PTF211301 Datasheet - Infineon Technologies AG

PTF211301, LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz

PTF211301 LDMOS RF Power Field Effect Transistor 130 W, 2110 *2170 MHz .
The PTF211301 is a 130. W, internally matched GOLDMOS FET intended for WCDMA applications. and two.

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Datasheet Details

Part number:

PTF211301

Manufacturer:

Infineon ↗ Technologies AG

File Size:

449.03 KB

Description:

LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz

Features

* Broadband internal matching Typical two
* carrier WCDMA performance at 2140 MHz - Average output power = 28 W - Linear Gain = 13.5 dB - Efficiency = 25% - Intermodulation distortion =
* 37 dBc - Adjacent channel power =
* 42 dBc Typical CW performance, 2170 MH

Applications

* It is characaterized for single
* and two

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PTF211301 LDMOS Power Field Effect Transistor 130 2110-2170 MHz Infineon Technologies AG

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