PTF211802A - LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz

Infineon Technologies AG

Datasheet Details

Part number	PTF211802A
Manufacturer	Infineon ↗ Technologies AG
File Size	169.15 KB
Description	LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
Datasheet	PTF211802A_InfineonTechnologiesAG.pdf

The PTF211802 is a 180 W, internally matched, laterally double diffused, GOLDMOS push pull FET intended for WCDMA applications from 2110 to 2170 MHz.

Broadband internal matching Typical two.
carrier WCDMA performance - Average output power = 38 W - Gain = 15 dB - Efficiency = 25% - IM3 =.
37 dBc - ACPR <.
42 dBc Typical CW performance - Output power at P.
1dB = 180 W - Efficiency = 50% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 180 W (CW) output power Two.
Carrier WCDMA Drive.
Up.

📁 PTF211802A Similar Datasheet

PTF - Metal Film Resistors (Vishay)
PTF08A-E - Relay (Omron)
PTF10007 - 35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor (Ericsson)
PTF10009 - 85 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor (Ericsson)
PTF10015 - 50 Watts/ 300-960 MHz GOLDMOS Field Effect Transistor (Ericsson)
PTF10019 - 70 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor (Ericsson)
PTF10020 - 125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor (Ericsson)
PTF10021 - 30 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor (Ericsson)

Other Datasheets by Infineon Technologies AG

Published: Apr 16, 2005 |