TG1 Datasheet | Specifications & PDF Download

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YANGZHOU POSITIONING TECH. CO., LTD TYPE: MTG150-06 Features · Triple arms · Non-insulated type Typical Applications · Welding power Supply · Variou

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HGTG12N60D1D April 1995 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode Package JEDEC STYLE TO-247 EMITTER COLLECTOR COLLECTOR (BOTTOM SI

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Ordering number : ENA2219 NGTG12N60TF1G N-Channel IGBT 600V, 12A, VCE(sat);1.4V TO-3PF-3L http://onsemi.com Features • VCE(sat)=1.4V typ. (IC=12A,

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NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non−Punch Through (NPT) T

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ORDER NO. KM40610223CE Telephone Equipment KX-TG1070FXB KX-TG1070FXC KX-TG1072FXB KX-TGA107EXB KX-TGA107EXC Digital Cordless Phone Black Version Blue

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Data Sheet HGTG10N120BND December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Thr

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HGTG11N120CND Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG11N120CND is a Non-Punch Thro

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L A N Extended Temperature Range, E-Ultra™ 10/100BASE-TX SOIC-16 Magnetic Modules HALO Electronics is pleased to offer the E-Ultra™, the industry’s f

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HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet August 2002 35A, 1200V, NPT Series N-Channel IGBT The HGTG10N120BN, HGTP10N120BN and HGT1S10N12

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HGTG12N60D1D April 1995 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode Package JEDEC STYLE TO-247 EMITTER COLLECTOR COLLECTOR (BOTTOM SI

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NGTG15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construc

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AEC-Q200 Ethernet Transformers SMD Single Port 10/100BASE-TX Automotive Transformers Conflict FREE ü US Patent Numbers: 5,656,985 6,297,721 B1 6,29

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SPECIFICATION FOR APPROVAL Description : Kingstate Part No. : Customer’s Model No. : Specification No. : Number Of The Edition : Magnetic Bu

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Aluminum Electrolytic Capacitors/ TG Surface Mount Type Series: ● ● ● ● ● TG Type: V ■ Features Endurance:125 °C 1000 h to 2000 h Miniaturization

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Dual GigE PoE/PoE+ Transformer SMD 48-Pin Dual Port Gig or Quad Port 10/100BASE-TX PoE/PoE+ Isolation Modules RoHS Compliant Conflict FREE ü Produ

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Single Port GigE Transformer SMD Single Port Gigabit or Dual Port 10/100BASE-TX Isolation Modules Conflict FREE ü US Patent Numbers: 5,656,985 6,29

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JMTG170N06A Description JMT N-channel Enhancement Mode Power MOSFET Features  60V,40A RDS(ON) <15mΩ @ VGS = 10V RDS(ON) <21mΩ @ VGS = 4.5V  Advan

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Aluminum Electrolytic Capacitors/ TG Surface Mount Type Series: ● ● ● ● ● TG Type: V ■ Features Endurance:125 °C 1000 h to 2000 h Miniaturization

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