FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･H.
Toshiba
TIM1011-15L - MICROWAVE POWER GaAs FET
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.0dBm at 10.7GHz to 11.7GHz ･HIGH GAIN G1dB= 7.0dB at 10.7GHz to 11.7GHz ･LOW INTERMOD.
Toshiba Semiconductor
TIM1011-5L - MICROWAVE POWER GaAs FET
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 37.5dBm at 10.7GHz to 11.7GHz ･HIGH GAIN G1dB= 7.0dB at 10.7GHz to 11.7GHz ･HERMETICALLY.
