TIM1414-10LA Datasheet | Specifications & PDF Download

www.DataSheet4U.com TOSHIBA MICROWAVE POWER GaAs FET Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level

(5 views)

www.DataSheet4U.com TOSHIBA Oct. 1999 TIM1414-10LA-252 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power

(4 views)