
TIM8596-8 - MICROWAVE POWER GaAs FET
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 39.5dBm at 8.5GHz to 9.6GHz ・HIGH GAIN
G1dB= 6.0dB at 8.5GHz to 9.6GHz ・HERMETICALLY SEA
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FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・H.
TIM8596-2 Distributor