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TIM8596-4 MICROWAVE POWER GaAs FET

TIM8596-4 Description

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TIM8596-4 Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 8.5GHz to 9.6GHz ･HIGH GAIN G1dB= 7.5dB at 8.5GHz to 9.6GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM8596-4 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power G

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MICROWAVE POWER GaAs FET Toshiba
Toshiba TIM8596-4-like datasheet