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TIM8596-2 Datasheet - Toshiba

MICROWAVE POWER GaAs FET

TIM8596-2 Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 33.5dBm at 8.5GHz to 9.6GHz ･HIGH GAIN G1dB= 7.5dB at 8.5GHz to 9.6GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM8596-2 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power G

TIM8596-2 Datasheet (381.41 KB)

Preview of TIM8596-2 PDF

Datasheet Details

Part number:

TIM8596-2

Manufacturer:

Toshiba ↗

File Size:

381.41 KB

Description:

Microwave power gaas fet.

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TIM8596-2 MICROWAVE POWER GaAs FET Toshiba

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