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TIM8596-2 MICROWAVE POWER GaAs FET

TIM8596-2 Description

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TIM8596-2 Features

* ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 33.5dBm at 8.5GHz to 9.6GHz ・HIGH GAIN G1dB= 7.5dB at 8.5GHz to 9.6GHz ・HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM8596-2 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power G

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Toshiba TIM8596-2-like datasheet