TIM8596-8 Datasheet | Specifications & PDF Download

TIM8596-8 MICROWAVE POWER GaAs FET

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･H.

TIM8596-8 (Toshiba)

MICROWAVE POWER GaAs FET

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.5dBm at 8.5GHz to 9.6GHz ･HIGH GAIN G1dB= 6.0dB at 8.5GHz to 9.6GHz ･HERMETICALLY SEA

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TIM8596-15 (Toshiba)

MICROWAVE POWER GaAs FET

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.0dBm at 8.5GHz to 9.6GHz ･HIGH GAIN G1dB= 7.0dB at 8.5GHz to 9.6GHz ･HERMETICALLY SEA

(9 views)

TIM8596-4 (Toshiba)

MICROWAVE POWER GaAs FET

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 8.5GHz to 9.6GHz ･HIGH GAIN G1dB= 7.5dB at 8.5GHz to 9.6GHz ･HERMETICALLY SEA

(9 views)

TIM8596-2 (Toshiba)

MICROWAVE POWER GaAs FET

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 33.5dBm at 8.5GHz to 9.6GHz ･HIGH GAIN G1dB= 7.5dB at 8.5GHz to 9.6GHz ･HERMETICALLY SEA

(8 views)

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