TIP3055 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Volta

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TIP2955 TIP3055 Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Application

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SEMICONDUCTORS PNP TIP2955 NPN TIP3055 SILICON POWER TRANSISTORS The TIP3055 is a NPN epitaxial-base transistor in TO3PN package.It is intended for p

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP3055/D Complementary Silicon Power Transistors TIP3055 PNP TIP2955 15 AMPERE POWER

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltag

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isc Silicon NPN Power Transistor isc Product Specification TIP3055F DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A

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SEMICONDUCTORS PNP TIP2955 NPN TIP3055 SILICON POWER TRANSISTORS The TIP3055 is a NPN epitaxial-base transistor in TO3PN package.It is intended for p

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Complementary Silicon Power Transistors TIP3055 (NPN), TIP2955 (PNP) Designed for general−purpose switching and amplifier applications. Features • DC

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