TK58E06N1 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK58E06N1，ITK58E06N1 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤5.4mΩ. (VGS = 10 V)

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TK58E06N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK58E06N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source

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