TO-126 Datasheet | Specifications & PDF Download

SEMICONDUCTOR TECHNICAL DATA LOW NOISE AMPLIFIER APPLICATION. FEATURES ᴌExcellent hFE Linearity : hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA : hFE(IC=0.1mA

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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1265N DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC3182

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AOZ1267QI-01 28V/8A Synchronous EZBuckTM Regulator General Description The AOZ1267-01 is a high-efficiency, easy-to-use DC/DC synchronous buck regula

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CY62126ESL MoBL® 1-Mbit (64 K × 16) Static RAM 1-Mbit (64 K × 16) Static RAM Features ■ Very high speed: 45 ns ■ Wide voltage range: 2.2 V to 3.6 V a

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19-1087; Rev 1; 8/97 Single/Dual/Quad, Wide-Bandwidth, Low-Power, Single-Supply Rail-to-Rail I/O Op Amps General Description The MAX4122–MAX4129 fami

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TC7MBL3125C,3126CFT/FK/FTG TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7MBL3125CFT,TC7MBL3125CFK,TC7MBL3125CFTG TC7MBL3126CFT,TC7MBL

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CAP1126 6 Channel Capacitive Touch Sensor with 2 LED Drivers PRODUCT FEATURES Datasheet General Description The CAP1126, which incorporates SMSC’s

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HI-SINCERITY MICROELECTRONICS CORP. H2N4126 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6216 Issued Date : 1992.09.22 Revised Date : 2005.01.20 Pag

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Ordering number:EN3280 FC126 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) Features · On-chip bias

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SPORTON LAB. SMD Molding Type Power Inductor TMPC Series SPORTON LAB. Features ● Shielded construction ● Handles high transient current spikes wi

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PSC Series 6 12 A Switching Regulators Input voltage up to 144 V DC Single output of 3.3 36 V DC No input to output isolation • Efficiency up to

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www.DataSheet4U.com MC54/74F125 MC54/74F126 3-STATE QUAD BUFFERS • High Impedance NPN Base Inputs for Reduced Loading QUAD BUFFERS, 3-STATE MC54/74F1

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www.DataSheet4U.com NSS12600CF8T1G 12 V, 6.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are m

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FSCQ-Series Green Mode Fairchild Power Switch (FPS™) February 2006 FSCQ-Series FSCQ0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FS

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GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications • •

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ST 2SA1268 PNP Silicon Epitaxial Planar Transistor For high voltage applications. The transistor is subdivided into two groups, G and L according to i

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Назначение КТ3126 кремниевый биполярный эпитаксиально-планарный p-n-p транзистор Кремниевый эпитаксиально-планарный СВЧ транзистор малой мощности. П

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WESTCODE An IXYS Company Date:- 20 Apr, 2005 Data Sheet Issue:- 2 Phase Control Thyristor Types N1265LS120 to N1265LS160 Old Type No.: N520SH12-15 A

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