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TOBA 3866 Matched Datasheet



Part Number Description Manufacture
2SC3866
Silicon NPN Power Transistors
pecified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Satu
Manufacture
Inchange Semiconductor
2N3866
NPN SILICON HIGH FREQUENCY TRANSISTOR
Specifications are subject to change without notice. REV. A 1/1
Manufacture
Advanced Semiconductor
C3866
TRIPLE DIFFUSED PLANER TYPE TRANSISTOR
Manufacture
Fuji Electric
2N3866
HIGH-FREQUENCY TRANSISTOR
Manufacture
Motorola
3866SF
Bipolar Junction Transistor
High voltage capability Features of good high temperature High switching speed 3.PACKAGE TO-220F 4.Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE
Manufacture
Jingdao
CY8C3866
Programmable System-on-Chip

 Operating characteristics  Voltage range: 1.71 to 5.5 V, up to six power domains  Temperature range (ambient)
  –40 to 85 °C[1]  DC to 67-MHz operation  Power modes
• Active mode 1.2 mA at 6 MHz, and 12 mA at 48 MHz
• 1-µA sleep mode
• 200-nA hi
Manufacture
Cypress Semiconductor
2N3866A
HIGH-FREQUENCY TRANSISTOR
Manufacture
Motorola
LM3866
NPN High Voltage Switching Transistor

■HIGH VOLTAGE CAPABILITY
■HIGH SPEED SWITCHING
■WIDE SOA
■ROHS COMPLIANT
●PC
●APPLICATION: PC Switch Mode Power Supply
●(TC=25℃)
●Absolute Maximum Ratings (Tc=25℃) PARAMETER SYMBOL - VCBO Collector-Base Voltage - VCEO Collector-Emitter Voltage - VE
Manufacture
Li Mai
MRF3866R2
HIGH-FREQUENCY TRANSISTORS
ed) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector
  –Emitter Breakdown Voltage (IC = 5.0 mAdc, RBE = 10 Ω) Collector
  –Emitter Sustaining Voltage (IC = 5.0 mAdc, IB = 0) Emitter
  –Base Breakdown Voltage (IE = 100 µAdc, IC = 0) Collector
Manufacture
Motorola
2N3866
Silicon NPN Power Transistor
ctor-Emitter Breakdown Voltage IC= 5mA; IB= 0 30 V V(BR)CER Collector-Emitter Breakdown Voltage IC= 5mA; RBE= 10Ω 55 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 55 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0
Manufacture
Inchange Semiconductor

Total 54 results






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