Part Number | Description | Manufacture |
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Silicon NPN Power Transistors pecified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Satu |
![]() Inchange Semiconductor |
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NPN SILICON HIGH FREQUENCY TRANSISTOR Specifications are subject to change without notice. REV. A 1/1 |
![]() Advanced Semiconductor |
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TRIPLE DIFFUSED PLANER TYPE TRANSISTOR |
![]() Fuji Electric |
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HIGH-FREQUENCY TRANSISTOR |
![]() Motorola |
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Bipolar Junction Transistor High voltage capability Features of good high temperature High switching speed 3.PACKAGE TO-220F 4.Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE |
![]() Jingdao |
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Programmable System-on-Chip Operating characteristics Voltage range: 1.71 to 5.5 V, up to six power domains Temperature range (ambient) –40 to 85 °C[1] DC to 67-MHz operation Power modes • Active mode 1.2 mA at 6 MHz, and 12 mA at 48 MHz • 1-µA sleep mode • 200-nA hi |
![]() Cypress Semiconductor |
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HIGH-FREQUENCY TRANSISTOR |
![]() Motorola |
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NPN High Voltage Switching Transistor ■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■ROHS COMPLIANT ●PC ●APPLICATION: PC Switch Mode Power Supply ●(TC=25℃) ●Absolute Maximum Ratings (Tc=25℃) PARAMETER SYMBOL - VCBO Collector-Base Voltage - VCEO Collector-Emitter Voltage - VE |
![]() Li Mai |
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HIGH-FREQUENCY TRANSISTORS ed) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector –Emitter Breakdown Voltage (IC = 5.0 mAdc, RBE = 10 Ω) Collector –Emitter Sustaining Voltage (IC = 5.0 mAdc, IB = 0) Emitter –Base Breakdown Voltage (IE = 100 µAdc, IC = 0) Collector |
![]() Motorola |
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Silicon NPN Power Transistor ctor-Emitter Breakdown Voltage IC= 5mA; IB= 0 30 V V(BR)CER Collector-Emitter Breakdown Voltage IC= 5mA; RBE= 10Ω 55 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 55 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 |
![]() Inchange Semiconductor |
Total 54 results |