2N3866
2N3866 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High Gain Bandwidth Product f T= 500 MHz (Min.)
- Low Collector Capacitance;
CC = 3 p F Max.
Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in output, driver or pre-driver stages in
VHF and UHF equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCER Collector-Emitter Voltage RBE= 10Ω
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation @TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-65~+200
℃ isc website：.iscsemi. isc & iscsemi is registered trademark
1 isc Silicon NPN Planar Epitaxial Overlay Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS...
