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2N3866 Datasheet Preview

2N3866 Datasheet

Silicon NPN Power Transistor

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isc Silicon NPN Planar Epitaxial Overlay Transistor
2N3866
DESCRIPTION
· High Gain Bandwidth Product
fT= 500 MHz (Min.)
· Low Collector Capacitance;
CC = 3 pF Max.
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
· Designed for use in output, driver or pre-driver stages in
VHF and UHF equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
55
V
VCER Collector-Emitter Voltage RBE= 10Ω
55
V
VCEO Collector-Emitter Voltage
30
V
VEBO Emitter-Base Voltage
3.5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25
0.4
A
3.5
W
TJ
Junction Temperature
200
Tstg
Storage Temperature Range
-65~+200
isc websitewww.iscsemi.com
isc & iscsemi is registered trademark
1




Inchange Semiconductor

2N3866 Datasheet Preview

2N3866 Datasheet

Silicon NPN Power Transistor

No Preview Available !

isc Silicon NPN Planar Epitaxial Overlay Transistor
2N3866
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
30
V
V(BR)CER Collector-Emitter Breakdown Voltage IC= 5mA; RBE= 10Ω
55
V
V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0
55
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1mA; IC= 0
3.5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA; IB= 20mA
1.0
V
ICEO
Collector Cutoff Current
VCE= 28V; IB= 0
20 μA
hFE-1
DC Current Gain
IC= 50mA ; VCE= 5V
10
200
hFE-2
DC Current Gain
IC= 360mA ; VCE= 5V
5
fT
Current-Gain—Bandwidth Product IC= 50mA; VCE= 15V,f = 200MHz 500
MHz
CC
Output Capacitance
IE= 0; VCB= 28V; f= 1MHz
3
pF
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of our
products.
ISC products are intended for usage in general electronic equipment. The products are not designed for
use in equipment which require specialized quality and/or reliability, or in equipment which could have
applications in hazardous environments, aerospace industry, or medical field. Please contact us if you
intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose,
nor does ISC assume any liability arising from the application or use of any products, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages.
isc websitewww.iscsemi.com
isc & iscsemi is registered trademark
2


Part Number 2N3866
Description Silicon NPN Power Transistor
Maker Inchange Semiconductor
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2N3866 Datasheet PDF






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