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2N3866 - Silicon NPN Power Transistor

Description

High Gain Bandwidth Product fT= 500 MHz (Min.)

CC = 3 pF Max.

VHF and UHF equipment.

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Datasheet Details

Part number 2N3866
Manufacturer Inchange Semiconductor
File Size 194.36 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet 2N3866 Datasheet
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Full PDF Text Transcription

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isc Silicon NPN Planar Epitaxial Overlay Transistor 2N3866 DESCRIPTION · High Gain Bandwidth Product fT= 500 MHz (Min.) · Low Collector Capacitance; CC = 3 pF Max. Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in output, driver or pre-driver stages in VHF and UHF equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 55 V VCER Collector-Emitter Voltage RBE= 10Ω 55 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 3.5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ 0.4 A 3.5 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~+200 ℃ isc website：www.iscsemi.
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