TS6 Datasheet | Specifications & PDF Download

HTS6A60H_HTS6A80H HTS6A60H/HTS6A80H 3 Quadrants Standard TRIAC FEATURES  Repetitive Peak Off-State Voltage : 600V/800V  R.M.S On–State Current (IT(

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RGTV60TS65 650V 30A Field Stop Trench IGBT Datasheet VCES IC(100°C) VCE(sat) (Typ.) PD 650V 30A 1.5V 194W Features 1) Low Collector - Emitter Sat

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Hear Aiding MEMS Microphone ZTS6554 DESCRIPTION The ZTS6554 is a high quality, low voltage, low power analog output bottom-ported omni-directional M

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Data Sheet 27627.100a ATS610LSA AND ATS611LSB DYNAMIC, PEAK-DETECTING, DIFFERENTIAL HALHLAELFL-FEFEFCETCTGGEEAARR--TTOOOOTTHHSESNESNOSROICRSICS 1 2

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TS68230 HMOS PARALLEL INTERFACE/TIMER . . . . . . . . TS68000 BUS COMPATIBLE PORT MODES INCLUDE : BIT I/O UNIDIRECTIONAL 8 BIT AND 16 BIT BIDIRECTIO

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BTS6201U Wideband high linearity pre-driver amplifier Rev. 5 — 5 September 2022 Product data sheet 1 General description The BTS6201U is a wideband,

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PROFET® BTS 6143 D Smart Highside Power Switch Reversave • Reverse battery protection by self turn on of power MOSFET Features • Short circuit prot

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www.DataSheet.co.kr GB100TS60NPbF Vishay High Power Products INT-A-PAK Half-Bridge (Ultrafast Speed IGBT), 108 A FEATURES • Generation 5 Non Punch

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Data Sheet 27627.114a ATS640JSB TRUE ZERO-SPEED, SELF-CALIBRATING, DIFFERENTIAL HALL-EFFECT GEAR-TOOTH SENSOR IC FOR TWO-WIRE APPLICATIONS The ATS6

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TS6B01G THRU TS6B07G Single Phase 6.0 Amps. Glass Passivated Bridge Rectifiers Voltage Range 50 to 1000 Volts Current 6.0 Amperes Features a a a a a

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STS6NF20V Datasheet N-channel 20 V, 30 mΩ typ., 6 A, 2.7 V drive, STripFET II Power MOSFET in an SO-8 package 5 8 Features Order code VDS RDS(on)

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RGTH60TS65D 650V 30A Field Stop Trench IGBT Datasheet VCES IC(100°C) VCE(sat) (Typ.) PD 650V 30A 1.6V 194W Features 1) Low Collector - Emitter Sa

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RGTH60TS65 650V 30A Field Stop Trench IGBT Datasheet VCES IC(100°C) VCE(sat) (Typ.) PD 650V 30A 1.6V 194W Features 1) Low Collector - Emitter Sat

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CERAMIC FILTER • S-LT10.7M / FM receiver • S-LT10.7M-A10 / Low loss • S-LT10.7M-W / Wide/Narrow band • S-LTCA/CV10.7M / SMD • S-LTMB / Leaded /TV, VCR

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RGW80TS65CHR 650V 40A Hybrid IGBT with Built-In SiC-SBD Datasheet VCES IC (100°C) VCE(sat) (Typ.) PD 650V 40A 1.5V 214W lFeatures 1) AEC-Q101 Qual

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PD -5.058B PRELIMINARY GA200TS60U Ultra-FastTM Speed IGBT VCES = 600V VCE(on) typ. = 1.8V @VGE = 15V, IC = 200A HALF-BRIDGE IGBT INT-A-PAK Featur

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Version: January 11, 2017 (LTS MCB/MDB) Ceramic Filters Web: www.token.com.tw Email: rfq@token.com.tw Token Electronics Industry Co., Ltd. Taiwan:

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TS612 DUAL WIDE BAND OPERATIONAL AMPLIFIER WITH HIGH OUTPUT CURRENT s LOW NOISE : 3nV/√Hz, 1.2pA/√Hz s HIGH OUTPUT CURRENT : 200mA s VERY LOW HARMONIC

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TS634 DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE s LOW NOISE : 3.2nV/√Hz, 1.5pA/√Hz s HIGH OUTPUT CURRENT : 160mA min. s VERY LOW H

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