TTF Datasheet | Specifications & PDF Download

NTTFS4932N MOSFET – Power, Single, N-Channel, m8FL 30 V, 79 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Dri

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NTTFS4929N MOSFET – Power, Single, N-Channel, m8FL 30 V, 34 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Dri

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NTTFS002N04C MOSFET  – Power, Single, N-Channel 40 V, 2.4 mW, 136 A Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Mi

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NTTFS4821N MOSFET – Power, Single, N-Channel, m8FL 30 V, 57 A Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize

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NTTFS4985NF MOSFET – Power, Single, N-Channel, WDFN8 30 V, 64 A Features • Integrated Schottky Diode • Low RDS(on) to Minimize Conduction Losses • L

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NTTFS015N04C MOSFET – Power, Single, N-Channel 40 V, 17.3 mW, 27 A Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Min

(11 views)

MOSFET – Power, Single N-Channel, m8FL 60 V, 22.6 mW, 24 A NTTFS024N06C Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to

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NTTFS4932NTWG-VB NTTFS4932NTWG-VB Datasheet N-Channel 30 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () Typ. 0.004 at VGS =

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MOSFET - Power, Single N-Channel, m8FL 100 V, 72 mW, 16 A NTTFS080N10G Features • Wide SOA for Linear Mode Operation • Low RDS(on) to Minimize Condu

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NTTFS5C460NL MOSFET – Power, Single, N-Channel 40 V, 4.8 mW, 74 A Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Mini

(10 views)

MOSFET - Power, Single N-Channel, STD Gate, m8FL 40 V, 4.9 mW, 65 A NTTFS4D9N04XM Features • Low RDS(on) to Minimize Conduction Losses • Low Capacita

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NTTFS4840N Power MOSFET Features 30 V, 26 A, Single N−Channel, m8FL • • • • • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Mi

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NTTFS4C05N Power MOSFET Features 30 V, 75 A, Single N−Channel, m8FL • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Dri

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NTTFS4C05N Power MOSFET Features 30 V, 75 A, Single N−Channel, m8FL • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Dri

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MOSFET – Power, Single N-Channel 100 V, 14.4 mW, 45 A NTTFS012N10MD Features • Shielded Gate MOSFET Technology • Low RDS(on) to Minimize Conduction L

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MOSFET - Power, Single N-Channel 60 V, 9 mW, 38 A NTTFD9D0N06HL General Description This device includes two specialized N−Channel MOSFETs in a dual

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NTTFS4937N MOSFET – Power, Single, N-Channel, m8FL 30 V, 75 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Dri

(8 views)

NTTFS4939N MOSFET – Power, Single, N-Channel, m8FL 30 V, 52 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Dri

(8 views)

NTTFS4941N MOSFET – Power, Single, N-Channel, m8FL 30 V, 46 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Dri

(8 views)

NTTFS4823N Power MOSFET 30 V, 50 A, Single N−Channel, m8FL Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Con

(8 views)