Features • High-performance, Low-power AVR® 8-b.
ATMEL Corporation
ATTINY84 - (ATTINYx4) 8-bit Microcontroller
ATtiny24/44/84 8-bit AVR Microcontroller with 2/4/8K Bytes In-System Programmable Flash DATASHEET Features ● High performance, low power AVR® 8-bit mi.
Lattice Semiconductor
LC4384C-5TN176C - Super Fast High Density PLDs
ispMACH 4000V/B/C/Z Family January 2004 TM Coolest Power C TM 3.3V/2.5V/1.8V In-System Programmable SuperFAST TM High Density PLDs Data Sheet Feat.
Rohm
SIR-34ST3F - Infrared light emitting diode
Sensors Infrared light emitting diode, top view type SIR-34ST3F The SIR-34ST3F is a GaAs infrared light emitting diode housed in clear plastic. This .
OSRAM
F0118G - GaAs Infrared Emitting Diode
GaAs-Infrarot-Lumineszenzdiode (950 nm, Enhanced Power) GaAs Infrared Emitting Diode (950 nm, Enhanced Power) F 0118G Vorläufige Daten / Preliminary .
Luminent
L-13-155-G-B - Light Emitting Diodes
L-13-155-G-B 1310 nm Light Emitting Diodes www.DataSheet4U.com Features • High efficiency • -40 to +85˚C operating temperature • Hermetically sealed .
Lattice Semiconductor
LC4384C-35FN256C - Super Fast High Density PLDs
ispMACH 4000V/B/C/Z Family January 2004 TM Coolest Power C TM 3.3V/2.5V/1.8V In-System Programmable SuperFAST TM High Density PLDs Data Sheet Feat.
LatticeSemiconductor
2096VL - 2.5VIn-SystemProgrammableSuperFASTHighDensityPLD
ispLSI 2096VL 2.5V In-System Programmable SuperFAST™ High Density PLD Features • SuperFAST HIGH DENSITY PROGRAMMABLE LOGIC — 4000 PLD Gates — 96 I/O P.
Fairchild Semiconductor
TIL38 - P-N GaAs Infrared-Emitting Diode
P-N GaAs Infrared-Emitting Diode Optoelectronic Products 4-72 TIL38 General Description The TIL38 is a p-n GaAs infrared-emitting diode in a low-cos.
Lattice Semiconductor
GAL20RA10 - High-Speed Asynchronous E2CMOS PLD Generic Array Logic
GAL20RA10 High-Speed Asynchronous E2CMOS PLD Generic Array Logic™ Features • HIGH PERFORMANCE E2CMOS ® TECHNOLOGY — 7.5 ns Maximum Propagation Delay —.
KODENSHI KOREA CORP
K301 - Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)
Photocoupler K301 • K302 • K304 These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Photo Darlington transist.
Hittite Microwave Corporation
HMC941 - 0.5dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR
ATTENUATORS - DIGITAL - CHIP HMC941 v00.0910 0.5 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 30 GHz 1 Typical Applications The HMC941 is idea.
PARA
L-318 - (L-31x) 3.0mm INFRARED EMITTING DIODE
L-31XXIR1XX 3.0mm INFRARED EMITTING DIODE ◆PACKAGE DIMENSIONS ◆ABSOLUTE MAXIMUN RATING: (Ta=25℃) Part No. L-31XXIR1XX PARAMETER PD（mw） 100 Power Dis.
Vishay Siliconix
TSAL6200 - High Power Infrared Emitting Diode
www.vishay.com TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW 94 8389 DESCRIPTION TSAL6200 is an infrared, .
Bright LED
BPC817 - Light Emitting Diode and NPN Silicon Phototransistor
BRIGHT LED ELECTRONICS CORP. SINCE 1981 DATA SHEET ● DEVICE NUMBER：BPC-817 SHEET 1 DATE 2 3 4 5 6 CONTENTS Original Released Features, Absolute , App.
ATMEL Corporation
ATtiny167 - 8-bit Atmel Microcontroller
Features • High Performance, Low Power AVR® 8-bit Microcontroller • Advanced RISC Architecture – 123 Powerful Instructions – Most Single Clock Cycle E.
Lattice Semiconductor
LC4256ZC-45T176C - Super Fast High Density PLDs
ispMACH 4000V/B/C/Z Family January 2004 TM Coolest Power C TM 3.3V/2.5V/1.8V In-System Programmable SuperFAST TM High Density PLDs Data Sheet Feat.
