
F0118J (OSRAM)
GaAs Infrared Emitting Diode
GaAs-Infrarot-Lumineszenzdiode (950 nm, 300 µm Kantenlänge) GaAs Infrared Emitting Diode(950 nm, 12 mil) F 0118J
Vorläufige Daten / Preliminary data
(16 views)
Features • High-performance, Low-power AVR® 8-b.
GaAs Infrared Emitting Diode
POTTING TYPT HV SUBASSEMBLY
(L-31x) 3.0mm INFRARED EMITTING DIODE
(L-31x) 3.0mm INFRARED EMITTING DIODE
(L-31x) 3.0mm INFRARED EMITTING DIODE
INFRARED EMITTING DIODE
Light Emitting Diodes
INFRARED EMITTING DIODE
POTTING TYPT HV SUBASSEMBLY
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)
(L-31x) 3.0mm INFRARED EMITTING DIODE
INFRARED EMITTING DIODE
Light Emitting Diode
INFRARED EMITTING DIODE
INFRARED EMITTING DIODE
Infrared Emitting Diode
INFRARED EMITTING DIODE
INFRARED EMITTING DIODE
INFRARED EMITTING DIODE
INFRARED EMITTING DIODE
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