To-263 Datasheet | Specifications & PDF Download

14118 Stowe Drive, Suite B Poway, CA 92064 TEL: (858) 621-2700 | FAX: (858) 486-1927 URL: www.zcomm.com EMAIL: applications@zcomm.com Voltage-Controll

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isc N-Channel MOSFET Transistor 75N75 FEATURES ·Drain Current –ID= 75A@ TC=25℃ ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resis

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HIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS SINGLE-CHANNEL 6N137 HCPL-2601 HCPL-2611 DESCRIPTION The 6N137, HCPL-2601/2611 single-channel and HCPL-26

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3263 DESCRIPTION ·With TO-3PN package ·Complemen

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LTC2634 Quad 12-/10-/8-Bit Rail-to-Rail DACs with 10ppm/°C Reference FEATURES DESCRIPTION n AEC-Q100 Qualified for Automotive Applications n Inte

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PQ1CY1032Z PQ1CY1032Z TO-263 Surface Mount Type Chopper Regulator s Features 1. Maximum switching current:3.5A 2. Built-in ON/OFF control function 3

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SY8263 High Efficiency Fast Response, 3A, 30V Input Synchronous Step Down Regulator General Description The SY8263 develops a high efficiency synchro

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Transistors 2SC2634 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1127 5.0±0.2 Unit: mm 4.0±0

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NSi826x-Q1 High Reliability Reinforced Six-Channel Digital Isolators Datasheet (EN) 1.3 Product Overview The NSi826x devices are high reliability six

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Transistors 2SC2636 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation Unit: mm ■ Features (0.4) 6.9±0.1 (1.5) (1.5)

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CS5263AN Datasheet Confidential for DP1.4 to HDMI2.0b Converter only CS5263AN Datasheet Contents 1 2 3 4 only Introduction

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CMPD6263 CMPD6263A CMPD6263C CMPD6263S SURFACE MOUNT SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUC

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LL5711 / LL6263 Schottky Barrier Diode Features 1. For general purpose applications. 2. Metal-on-silicon schottky barrier device which is protected

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Transistors 2SC2631 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 5.0±0.2 Unit:

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Power Transistors 2SD1263, 2SD1263A Silicon NPN triple diffusion planar type For power amplification Unit: mm s q q Features High collector to base

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 60V ·DC Current Gain— : hFE = 750(Min) @ I

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Date:- 9th September, 2014 Data Sheet Issue:- 3 Wespack Phase Control Thyristor Types N1263JK160 to N1263JK180 Development Type No.: NX159JK160-180 A

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NSI826x High Reliability Reinforced Six-Channel Digital Isolators Datasheet (EN) 1.7 Product Overview The NSI826x devices are high reliability six-ch

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