To-263 Datasheet | Pinout, Features, Price Comparison & PDF

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HIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS SINGLE-CHANNEL 6N137 HCPL-2601 HCPL-2611 DESCRIPTION The 6N137, HCPL-2601/2611 single-channel and HCPL-26

TA8263BH TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8263BH Max Power 43 W BTL × 4 ch Audio Power IC The TA8263BH is 4 ch BTL audi

Transistors 2SC2631 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 5.0±0.2 Unit:

SY8263 High Efficiency Fast Response, 3A, 30V Input Synchronous Step Down Regulator General Description The SY8263 develops a high efficiency synchro

isc N-Channel MOSFET Transistor 75N75 FEATURES ·Drain Current –ID= 75A@ TC=25℃ ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resis

CMPD6263 CMPD6263A CMPD6263C CMPD6263S SURFACE MOUNT SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUC

Transistors 2SC2634 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1127 5.0±0.2 Unit: mm 4.0±0

CMPD6263 CMPD6263A CMPD6263C CMPD6263S SURFACE MOUNT SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUC

Transistors 2SC2636 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation Unit: mm ■ Features (0.4) 6.9±0.1 (1.5) (1.5)

Transistors 2SC2634 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1127 5.0±0.2 Unit: mm 4.0±0

CMDD6263 SURFACE MOUNT SILICON HIGH VOLTAGE SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDD6263 is a

: 3 SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES . Complementary to 2SC3180 . Recommend for 40W High Fidelity Audio Freq

Technical coantmesntAsGtill valid Datasheet AS5263 12-Bit Redundant Automotive Angle Position Sensor 1 General Description The AS5263 is a contactle

CMPD6263 CMPD6263A CMPD6263C CMPD6263S SURFACE MOUNT SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUC

LL5711 / LL6263 Schottky Barrier Diode Features 1. For general purpose applications. 2. Metal-on-silicon schottky barrier device which is protected

VCEO = 230 V, IC = 15 A Silicon NPN Epitaxial Planar Transistor 2SC3263 Data Sheet Description The 2SC3263 is an NPN transistor of 230 V, 15 A. The

HIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS SINGLE-CHANNEL 6N137 HCPL-2601 HCPL-2611 DESCRIPTION The 6N137, HCPL-2601/2611 single-channel and HCPL-26

1.2A DC/DC ■ XT2263 、、 DC/DC 。 PWM ，，， 。 。 3A 。 1.2A 。180uA 90％ 。 。 ■    ■ ■  90％  180μA  1.5MHz  PWM/PFM  5V 1.2A  ■ 

TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SD2638 Horizontal Deflection Output for Color TV, Digital TV. High Speed Switching Applicati