CY7C1263XV18 36-Mbit QDR II+ Xtreme SRAM Four-Word Burst Architecture

Cypress Semiconductor

Description

CY7C1263XV18 CY7C1265XV18 36-Mbit QDR® II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) 36-Mbit QDR® II+ Xtreme SRAM Four-Word B.

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Datasheet Specifications

Part number: CY7C1263XV18
Manufacturer: Cypress Semiconductor
File Size: 1.17 MB
Datasheet: CY7C1263XV18-CypressSemiconductor.pdf
Description: 36-Mbit QDR II+ Xtreme SRAM Four-Word Burst Architecture

Features

* Separate Independent Read and Write Data Ports
* Supports concurrent transactions
* 633 MHz Clock for High Bandwidth
* Four-word Burst for Reducing Address Bus Frequency
* Double Data Rate (DDR) Interfaces on both Read and Write Ports (data transferred at 1266 MHz) at 633 MHz

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36-Mbit QDR II + Xtreme SRAM Four-Word Burst Architecture Cypress Semiconductor

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