CY7C1265KV18, CY7C1263KV18 Datasheet - Cypress Semiconductor

CY7C1265KV18, CY7C1263KV18, 36-Mbit QDR II+ SRAM Four-Word Burst Architecture

CY7C1263KV18/CY7C1265KV18 36-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) 36-Mbit QDR® II+ SRAM Four-Word Burst Architect.

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CY7C1263KV18-CypressSemiconductor.pdf

CY7C1265KV18 Datasheet Preview — This datasheet PDF includes multiple part numbers: CY7C1265KV18, CY7C1263KV18. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

CY7C1265KV18, CY7C1263KV18

Manufacturer:

Cypress Semiconductor

File Size:

1.23 MB

Description:

36-Mbit QDR II+ SRAM Four-Word Burst Architecture

Note:

This datasheet PDF includes multiple part numbers: CY7C1265KV18, CY7C1263KV18.
Please refer to the document for exact specifications by model.

Features

* Separate independent read and write data ports
* Supports concurrent transactions
* 550 MHz clock for high bandwidth
* Four-word burst for reducing address bus frequency
* Double data rate (DDR) Interfaces on both read and write ports (data transferred at 1100 MHz) at 550 MHz

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CY7C1263KV18 36-Mbit QDR II + SRAM Four-Word Burst Architecture Cypress Semiconductor

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